Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects
Identifieur interne : 000B01 ( Main/Exploration ); précédent : 000B00; suivant : 000B02Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects
Auteurs : K. Laïhem [Algérie] ; R. Cherfi [Algérie] ; M. Aoucher [Algérie]Source :
- Thin solid films [ 0040-6090 ] ; 2001.
Descripteurs français
- Pascal (Inist)
- Wicri :
English descriptors
- KwdEn :
Abstract
In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.
Affiliations:
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Le document en format XML
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<term>Amorphous hydrogenated material</term>
<term>Desorption</term>
<term>Experimental study</term>
<term>Hydrogen</term>
<term>IV characteristic</term>
<term>Magnesium</term>
<term>Metal-semiconductor contacts</term>
<term>Nickel</term>
<term>Platinum</term>
<term>Rectification</term>
<term>Schottky barrier diodes</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Contact métal semiconducteur</term>
<term>Caractéristique courant tension</term>
<term>Effet redresseur</term>
<term>Matériau amorphe hydrogéné</term>
<term>Nickel</term>
<term>Magnésium</term>
<term>Platine</term>
<term>Diode barrière Schottky</term>
<term>Adsorption</term>
<term>Désorption</term>
<term>Hydrogène</term>
<term>7330</term>
<term>7340E</term>
<term>Ni</term>
<term>Mg</term>
<term>Pt</term>
<term>a-Si:H</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nickel</term>
<term>Magnésium</term>
<term>Platine</term>
<term>Hydrogène</term>
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<front><div type="abstract" xml:lang="en">In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.</div>
</front>
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<affiliations><list><country><li>Algérie</li>
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<tree><country name="Algérie"><region name="Wilaya d'Alger"><name sortKey="Laihem, K" sort="Laihem, K" uniqKey="Laihem K" first="K." last="Laïhem">K. Laïhem</name>
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<name sortKey="Aoucher, M" sort="Aoucher, M" uniqKey="Aoucher M" first="M." last="Aoucher">M. Aoucher</name>
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